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          Helios-PL PL System

           

           

          Photoluminescence (PL) Imaging is a unique non-invasive inspection tool as it can be used in-line at many different steps of the cell manufacturing process. This facilitates the direct comparison of data obtained at one process step to data obtained at another. Additionally, PL imaging can be compared to electroluminescence (EL) imaging on finished cells using comparable equipment.




          Product's Feature
          Application:
          Mono crystal silicon wafers and cells,
          Poly crystal silicon wafers and cells
          Thin film cells
          Compounds cells
          Capabilities:
          Minority carrier lifetime scan
          Silicon classification
          Series resistance
          Micro cracked
          IV curve in dark and light conditions
          In-Line PL Imaging Benefits
            Screen every wafer at in-line speeds 
            Obtain information across entire wafer - not just at discrete points
            Identify Anomalous Cause Variations
            Identify and Track Defect Mitigation
          Define and Identify
            Responsible for low lowering yield and degrading efficiency 
            Characterize wafers from processes steps.
          Measure and Analyze 
            Obtain photoluminescence PL imagery of processing steps 
            Track wafers through all processing steps 
            Collate information for use in predictive model
            Tailored in-line design
          Improve and Control 
            Integrate in-line equipment into production line 
            Continuous improvement monitoring processes 
          Used for electroluminescence imaging on finished cells
          Only process good material
          Cost effectively improve throughput
          Maximize average cell efficiencies
          Tighten cell efficiency distribution
          Identify common and special cause variations in real-time  
          We provide more than inspection equipment.




          技術參數(shù):

          Indium gallium arsenide sensor :900-1500nm
          Size: 23mm * 23mm ~ 200mm * 200mm
          Pixels: 752 × 480pixel
          Testing time<1s



           

          Typical Customer:
          American,Europe and Asia and so on.

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