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          Boron Dopant & Phosphorus Dopant

          拉單晶摻雜劑 - 母合金

          The dopant is used to change the impurities and resistivity of silicon ingot to meet the requirements. Henergysolar offers various types of boron dopant & phosphorus dopant:

          Shape:
              Ingot
              Chunk
              Wafer
          Doped type:
              P-type 
              N-type
          Resistivity :
              0.001-0.006 ohm.CM 
              Resistivity deviation 0.001 or 0.0005 in the concentration range
          Boron (atom/cm3) = 1.1732E20 ~ 1.6184E19
          Phosphorus (atom/cm3) = 7.3763E19 ~ 9.6552E18
          Carbon content (atom/cm3) <5E16
          Oxygen content (atom/cm3) <1E18

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